Abstract
For the predictive simulation of the operation of power semiconductor devices, physically rigorous models and careful calibration are indispensable. This work presents an advanced methodology for the validation and calibration of electrothermal power device models. It is based on the adjustment of simulation results to measured terminal characteristics, internal carrier concentration and temperature profiles. As instructive examples, we demonstrate the calibration of mobility and carrier lifetime models for two commercially available IGBT types.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.