Abstract
A calibration curve for infrared absorptiometry of nitrogen in silicon at 963 cm−1 was obtained by the use of charged particle activation analysis with the 14N(p, α) 11C reaction. For as-grown floating zone (FZ) silicon, it is expressed as [nitrogen concentration at. cm−3)] =(1.83±0.24)×1017 (absorption coefficient). For heat-treated FZ silicon and Czochralski (CZ) silicon, this relation was found to give underestimated nitrogen concentration suggesting the existence of infrared insensitive nitrogen.
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