Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon

Abstract

Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra‐shallow distributions of arsenic in silicon obtained by ion implantation. A previously developed quantitative model for the correction of results obtained by ultra low energy SIMS was tested on different types of samples. The model deals with the different sputtering regimes in SiO2 and Si and corrects the analysis behaviour at the SiO2/Si interface. Model results were compared with MEIS which yields depth profiles that are more accurate and can be quantified from first principles. The obtained model was tested on samples with or without a pre‐amorphization implant step prior to As implantation and subsequently annealed at 550 °C in a partially oxidizing atmosphere. Results show excellent agreement on As peak position and shape; however, MEIS detects differences between profiles of preamorphised and non‐preamorphised samples whereas SIMS profiles of these samples are almost identical. Copyright © 2012 John Wiley & Sons, Ltd.