Calibration and Parameter Extraction of STT-MTJ Device at High Frequency by Using De-Embedding Approach Based on TRL Calibration

Abstract

Spin-Torque-Transfer Magnetic Tunnel Junction (STT-MTJ) device shows wide applications in many important scenarios, including magnetic random access memory (MRAM), logic design, and high-frequency application. Its characterizations at the high frequency are studied intensively recently. In this article, the high-frequency properties of the STT-MTJ device are investigated thoroughly, including a de-embedding approach followed by an extraction procedure for removing the influences from the environment and the package. The de-embedding approach is performed on the STT-MTJ device operated at a high frequency, which can be used to calibrate its electrical characteristics by eliminating the environmental influence. After the calibration, the equivalent circuit for the MTJ device at high frequency can be set up, followed by the extraction procedure of the parasitic parameters of the high-frequency-equivalent-circuit. Combined with the extracted parameters, the equivalent circuit can be used for the simulation work with the MTJ device involved in the high-frequency operation.