Abstract
Starting from basic findings on deposition techniques and from energetic data on crystalline diamond, quantitative applications to technologically important deposition requirements have been derived. The relations between growth rate, ion flux and plasma density can guide the selection of appropriate plasma activation and deposition conditions. In addition, the growth of an electrically insulating film from an ion flux is discussed and a charge-compensating substrate bias frequency is calculated. The numerical relations are tested by comparison with results from cathodic arc deposition of diamond-like carbon structures.
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