Abstract
Calculations of hole subbands in GaAs-AlGaAs quantum wells and superlattices are performed within the envelope-function approach, with full inclusion of the degeneracy and warping of the bulk valence bands described by the Luttinger Hamiltonian. Boundary conditions including effective-mass discontinuities at the interfaces are adopted. The subband dispersion is characterized by large nonparabolicities, which strongly affect the density of states of the valence subbands and the joint density of states for transitions to the conduction subbands. The validity of some approximations, the sensitivity of the hole subband structure to the valence-band-edge discontinuity, and a comparison to optical experiments are briefly discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
