Calculations for the band lineup of strained InxGa1−xN/GaN quantum wells: Effects of strain on the band offsets

Abstract

Band lineup is one of the most important parameters associated with carrier confinement in heterostructures. Relations for computing the band lineups of InxGa1−xN based heterostructures have been developed. The band positions for InxGa1−xN/GaN heterointerfaces are calculated from the equations developed, which directly corelate the positions of the bands with the band gap of InN and strain at the interface. The strains are calculated from the In mole fractions and lattice constants. The parameters implicitly involved are the elastic stiffness constants (C11 and C12), the hydrostatic deformation potential of the conduction band (a′), and the hydrostatic deformation potential (a) and shear deformation potential (b) for the valence band. Computations have been carried out for different reported band gaps of InN. The effects of strain become prominent as the mole fraction of In increases, changing the band offset ratio.