Calculation of the residual resistivity and the low-field Hall coefficient of 3d and 4sp impurities in aluminum.

Abstract

We report systematic calculations of the residual resistivity and the low-field Hall coefficient of Al-based dilute alloys with 3d and 4sp impurities, by self-consistently solving the linearized Boltzmann equation. We employ the on-Fermi-sphere approximation, which allows us to combine the full anisotropy of the aluminum Fermi surface, obtained by the four-orthogonal-plane-wave method, with the phase shifts associated with isotropic impurity scattering, evaluated by self-consistent local-density-functional impurity-in-jellium calculations. Our results show that the anisotropic scattering increases the residual resistivity, thus obtaining better agreement with the experiment. Moreover, a consistent interpretation of the observed trends of the low-field Hall coefficient is presented.