Calculation of the probability of nonradiative electronic transitions from deep centers in GaAs in the one-coordinate approximation

Abstract

A study was made of the experimental optical bands of radiative VGaSAs and VGaSnGa complexes in GaAs in a wide temperature range. Parameters of the one-coordinate model of the centers were determined. The configuration-coordinate diagram of the VGaSAs complex was constructed. Using parameters of the one-coordinate model of the VGaSAs complex as the base, the field dependences of emission rates were calculated. The calculation results were compared with the experimental data. A conclusion was made that the one-coordinate model can be used for the description of the field dependence of the rate of hole emission from the VGaSAs center.