Abstract
Experimental optical bands of the emitting complexes (a gallium vacancy with a donor at the nearest, from the vacancy, sublattice site) VGaSAs and VGaSnGa in GaAs are investigated in a wide temperature range. The parameters of a one‐coordinate model of these centers are determined. A configuration‐coordinate diagram of the VGaSAs complex is constructed. Calculation of the field dependences of emission rates is carried out in terms of the parameters of the one‐coordinate model of the VGaSAs complex and the data obtained are compared with the results of experimental studies of the emission of electron holes from a deep‐lying center of the VGaSAs complex.
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