Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors

Abstract

We apologize to the readers of Semiconductor Science and Technology for erroneous data in the tables 1 and 2. Unfortunately, our lack of attention led to incorrect numerical values for line width Γ(η) and Q(η) parameter in table 1 and for almost all columns in table 2 (except LO-phonon lifetime). Here we provide the correct versions of the two tables.We have to make one note. From the corrected table 2 it is clearly seen that the value of the ratio τLOΓ/ℏ for InSb in table 2 is less than unity, so our theory is not valid for InSb.The actual parameters of the Fano resonance should significantly differ from those mentioned in table 2 for this semiconductor. But we kept the row with InSb for illustrative purposes.