Abstract
General analytic expression for the intensity-dependent absorption coefficient (IDAC) of an intense electromagnetic wave (IEMW) in two-dimensional electron systems (2DES) is obtained by using the quantum kinetic equation (QKE) for electrons in the case of electron–optical phonon scattering in a doped semiconductor superlattice (DSSL). The dependence of IDAC on the amplitude E0 and the photon energy ℏΩ of an IEMW, the energy ℏωp and the temperature for a specific n-i-p-i superlattice of GaAs : Si / GaAs : Be is achieved due to a numerical method. The computational results show that not only the dependence of IDAC on ℏΩ but also the dependence of IDAC on ℏωp can be applied to optically detect the electric subbands in a DSSL.
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