Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique

M Abou-Khalil,K Wu,T Matsui,D Schreurs

doi:10.1109/apmc.1997.654637

Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique

M Abou-Khalil, K Wu + Show 2 more

https://doi.org/10.1109/apmc.1997.654637

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Publication Date: Dec 2, 1997

Affiliation: Polytechnique Montréal

#Escape Phenomena #Capture Phenomena + Show 8 more

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Abstract

The non-linear characteristics of an InP based lattice-matched HEMT are determined by Monte Carlo simulation. By considering the capture and escape phenomena as scattering events, carriers have higher energy values than in the case of classical treatment and therefore the drain-source current values differ by an amount of 30-40%.

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