Abstract
AbstractThe local density of electronic states is calculated on the (111) surface of silicon with disordered adsorption of atomary hydrogen with an arbitrary degree of coverage. Computations are made by the recursion method and the method of generalized Bethe lattices. The dependence of the electronic density of states on the degree of coverage of the surface by hydrogen is investigated. The results obtained by the recursion method and the generalized Bethe lattice method are compared with those obtained by other methods and by the experiment and a good overall agreement is found. The contribution of hydrogen and silicon atomic states into the electronic structure of the Si(111) surface is analyzed.
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