Abstract
With use of the "rigid-pseudoion" model, the first calculation of the electron-phonon and hole-phonon scattering matrix elements for the TO, LO, TA, and LA phonon-assisted indirect transitions ($\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Delta}$) in Si has been performed. Excellent agreement with experimental values for the TO phonon is found. Based on the present results, the intensities of the entire $\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Delta}$ indirect spectrum of this material can be accurately described, thereby rigorously testing the model.
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