Calculation of Reverse Annealing in Neutron Damaged p-Type Silicon

Abstract

A calculation of the reverse annealing process in neutron-burst irradiated p-type silicon at 300°K was performed, utilizing a variation of the equilibrium cluster theory of Gregory. Material conditions which were considered included 1, 10, and 100 ?-cm material with an injection ratio of 10-6 , and 1 ?-cm material with injection ratios of 10-7 and 10-8. This calculation demonstrated the relationship between the peak and time of occurrence of the damage constant versus time curve and the material resistivity and injection level. It was also shown that the reverse annealing rate depends upon the capture rate of defects in the cluster, rather than the rate of transport of defects from the depletion region to the cluster. These carrier capture rates were such that the forward annealing process usually began before the clusters reached charge saturation. Finally, it was concluded that an injected minority carrier pulse lasting less than 5×10-6 sec after burst will not appreciably affect the reverse annealing process.