Abstract
Insulated Gate Bipolar Transistor(IGBT) is a fully controlled power electronic device with excellent comprehensive performance, which is widely used in various inverter units. At present, Infineon’s IPOSIM simulation is usually used to obtain the power consumption and junction temperature fluctuation of IGBT modules, but it is only applicable to IGBT modules produced by Infineon. In this paper, the power consumption of IGBT and diode is calculated, and the expression of junction temperature fluctuation is obtained based on junction-shell transient thermal resistance, which is suitable for common IGBT modules. Finally, simulation verifies the correctness of the calculation method.
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