Abstract
In this note the formation and stability of FeB pairs at room temperature in high-resistivity B-doped Si is investigated theoretically, using the ionic pairing model. In brief, the position of the Fermi level is calculated as a function of the paired and interstitial fraction of Fe and of the B doping density. It will be shown that FeB pair formation is possible down to B densities of the order of 3×10 12 at/cm 3 and decreases considerably below. The latter result is in agreement with DLT-spectra obtained on n +p diodes fabricated in 10 12 at/cm 3 B-doped substrates.
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