Abstract
In order to clarify the electronic properties of the ternary compound semiconductor GaPN, in a zinc-blende structure, a simple pseudopotential scheme (EPM), within an effective potential (VCA), is proposed. The effects of disorder and spin–orbit coupling are neglected. Various quantities, such as energy levels, charge densities, ionicity character, transverse effective charge, and refractive index are obtained for this alloy. Moreover, the crossover of the direct and indirect band gaps is predicted.
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