Abstract
Numerical calculations of charge distributions and injection ratios for high-barrier Schottky diodes are performed to extend the understanding of this type of phenomena under various conditions. The calculations are performed for two doping concentrations, 10 14 and 10 13 cm −3, in n-type silicon and for several barrier heights in the range 0.92-0.79 eV. Two sets of carrier lifetimes are used to give nominal diffusion lengths that are much larger than, or comparable with, the dimension of the structure. The boundary conditions at the barrier were those of the combined diffusion-emission model. The back contact was modeled as a perfect ohmic contact, or as a low-high junction. The results are compared with experiments involving the use of injecting Schottky rectifiers, capable of giving low forward-voltage drop and sustaining moderately-high reverse voltages.
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