Abstract
A previously presented computer model was used to calculate melt thresholds and carrier temperatures in crystalline silicon subjected to 20-ps laser pulses at 532 nm. The energy relaxation time of hot carriers was a variable parameter. A thermalization time of 1 ps yields results which are in very satisfactory agreement with published experimental data: the melt threshold is 0.19 J/cm2 and the maximum carrier temperature for the threshold pulse is 5000 K.
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