Abstract
An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the quasionedimensional electron channel defined in a GaAs/Al x Ga1-x As heterostructure by split gates. Using the WKB approxima tion, the acoust oelectric current is calculated when only one electron is captured in the quantu m well. We discussed the effect on acoustoeletric current caused by SAW power, S AW frequency, gate voltage and sourcedrain bias.
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