Abstract
A new method for estimating the effective parameters of Morse potential under thermal disorder and pressure effects for materials has crystals structure developed by using the energy of sublimation, the compressibility, and the lattice constant. Use the Morse potential parameters received to calculate the mean square relative displacement, spring constants, anharmonic interatomic effective potential, and local force constant for silicic and germanium semiconductor crystals, are the materials have diamond structure crystals. The received results suitable for the experimental values and other theories.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
