Abstract
We check the accuracy of the Kane approximation, relating radiative matrix elements to the conduction-band effective mass. We prove that the Kane approximation is good to better than 1% accuracy in GaAs. Similar accuracy should hold in most applications of the Kane approximation to group iii–iv and group iv semiconductors.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
