Abstract
The performance of an InAs thermovoltaic (TV) cell based on a p-on-n junction architecture has been modeled for the 866 K to 1255 K temperature range. Cell efficiency as high as 23% using a filtered 1255 K blackbody as an intermediate emitter has been predicted. A reasonably high open circuit voltage (V/sub ocspl sim/0.2 V) and short circuit current (0.5-1 kA) can be achieved with moderate optical concentration. The thermal coefficient of V/sub oc/, /spl part/V/sub oc/spl part/T, of the cell has been evaluated to be greater than -1 mVspl deg/C. The modeling also shows that the use of a selective emitter results in a better TV cell performance by /spl sim/10% compared to ideal blackbody source. >
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