Abstract
The longitudinal phonon spectrum and the associated Raman strength of (100) InAs GaSb superlattices are calculated along the growth direction. Apart from confined and extended modes, as found also in GaAs AlAs superlattices, this system shows new modes localized at the interface. The energy and the Raman strength of these latter modes depend crucially on the nature of the interface (InSb or GaAs) and suggest that they are experimentally observable.
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