Abstract
In the present study, were port the calculated life times of the first hydrogen stretching excited state on a hydrogen-covered H/Ge(111) germanium surface using molecular dynamics simulation based on the Bloch-Redfield the ory. The life time was found to be 20 mi cro sec onds at room temperature, four or derslon ger than the hydrogen stretches on aH/Si(111) silicon surface. In addition, the calculations for the Ge-D and Ge-T stretches gave life times in the time scale of hundreds and tens of nano seconds, respectively, at room temperature. The thermal effect and an effect of the Ge-Ge-H bending frequency in the calculated life times are discussed.
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