Abstract
Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the scope for better performance of infrared detectors fabricated on the HgCdTe epilayers. A background of our previous work on metal organic chemical vapor deposition (MOCVD) of GaN on nanopatterned alternative silicon substrates has been presented. Residual stress measurements were made on the GaN epilayers by spatially resolved Raman spectroscopy, which shows reduced strain in the epilayer growth on the patterned substrates. A theoretical approach of strain in planar substrates, compliant substrates, and patterned compliant substrates is presented with detailed plots.
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