Abstract
AbstractLead telluride doped with cadmium is grown in a two temperature furnace. The cadmium content is controlled through cadmium vapor pressure. Electronic concentration and Hall mobility are measured for cadmium concentrations up to 1.65 × 1021 cm−3 at 77 and 300 K. Mobility variations are fairly explained by a model taking into account dispersion on acoustic and optical phonons, and neutral impurities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
