CAD-Oriented Equivalent Circuit Modeling of a Two-Port Ground-Shielded MIM Capacitor

Abstract

This brief presents a parameter extraction methodology for implementing an equivalent circuit model for the microwave behavior of metal–insulator–metal (MIM) capacitors. The proposal accounts for the parasitics that originate the capacitance degradation effect (i.e., the kink effect) occurring in practical devices when configured as a two-port network. The model is experimentally validated up to 60 GHz using several multicell MIM capacitors exhibiting different total effective area. Furthermore, by applying the model, the permittivity of the thin film dielectric is determined after removing the effects introduced by the test fixture.