Abstract

Low temperature-quenching and high-efficiency Ca3Sc2Si3O12:1%Ce3+, x%Ba2+ phosphors were prepared by solid state method and the properties of these phosphors were investigated. The results showed that co-doping of Ba2+ ions can improve the photoluminescence properties and decrease temperature-quenching of Ca3Sc2Si3O12:Ce3+ phosphor obviously. High-efficiency blue-green light-emitting diode was fabricated with the prepared phosphor and an InGaN blue-emitting (~460 nm) chip. Good performance of the prepared LED indicates that Ca3Sc2Si3O12:1%Ce3+, 0.5%Ba2+ phosphor is a suitable candidate for the fabrication of high-efficiency white LEDs.

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