Abstract
We analyze the screening length and the base series admittance effect on the measurement of the barrier capacitance and voltage in semi-insulating (SI) semiconductors. Specific experimental conditions are summarized which enable the utilization of C-V analysis in SI materials. It is shown that under such experimental conditions the formula of Sah and Reddi for low-frequency C-V dependence can be applied for the calculation of the concentration of residual shallow impurities. These considerations are applied for the low-frequency C-V analysis of the Schottky barrier in SI GaAs:Cr formed by Au contact and the concentration of residual shallow donors is determined. Some limitations of the presented C-V analysis are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
