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Abstract
The influence of metal-free ZnO nanoseed-layers on the growth of ZnO films on a-plane sapphire substrates by chemical vapor deposition (CVD) is investigated. For epitaxial films with a high density of (11¯01) inclusions we find a twofold orientation of these inclusions with the epitaxial relationships (112¯0)Al2O3∥(11¯01)ZnO and (101¯4)Al2O3∥(0001)ZnO. HRXRD measurements show that these inclusions are tilted by approx. 1.45° towards the sapphire substrate as a result of strain relaxation during heteroepitaxial growth. Numerical simulations with ANSYS confirm this as the energetically favorable situation. Detailed HRXRD and EBSD studies show that the occurrence of (11¯01) oriented nanocrystallites during nucleation is responsible for the formation of dislocations, and that the nucleation process has a pronounced influence on the crystal quality of c-plane ZnO films grown on a-plane sapphire.
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