低速高电荷态重离子在C 60 薄膜中引起的势效应研究

Abstract

为了研究低速高电荷态离子在C60薄膜中引起的势效应， 用能量为200 keV的高电荷态Xen+(n=3, 10, 13, 15, 17, 20, 22, 23)离子辐照了C60薄膜。用原子力显微镜（AFM）和Raman散射技术分析了辐照过程中高电荷态Xen+离子所储存势能在C60薄膜中引起的效应， 即势效应。AFM分析结果表明， 辐照C60薄膜的表面粗糙度随辐照Xen+离子电荷态（即势能）的增加而减小， 揭示了势效应的存在。而Raman分析结果表明， 由于Xe离子的动能远大于其所储存的势能， 因此， 尽管有表面势效应的影响， 但在Raman分析的深度范围内， 弹性碰撞还是主导了C60薄膜的损伤过程。 In order to investigate the potential effect in the C60 films induced by slow highlycharged ion(SHCI), the irradiation experiments of C60 films were performed by using Xen+ ions(n=3, 10, 13, 15, 17, 20, 22, 23). The irradiated C60 films were analyzed by means of AFM and Raman scattering. The analysis results indicated that the surface roughness of C60 films irradiated is decreasing with the increase of the charge state of Xen+ ions(potential energy stored in Xen+ ions).This reveals the existing of the potential effect. The results of the Raman spectra showed that in despite of existing influence of potential effect, the damage process of C60 films in the area for analysis depth of Raman is dominated by the elastic collisions, because the deposited potential energy of Xen+ ion in C60 films is much less than its kinetic energy.