Abstract
The study of degradation process in high-power laser diodes, in particular, high-power laser bars, has become increasingly important as the output power of these devices continues to rise. We present a “by-emitter” degradation analysis technique, which examines degradation processes at both the bar and emitter levels. This technique focuses on understanding the dynamic mechanisms by which packaging-induced strain and operating conditions lead to the formation of defects and subsequent emitter and bar degradations. In the example presented, we examine a highly compressively strained bar, where thermally induced current runaway is found to be an important factor in the bar degradation and eventual device failure.
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