Abstract
The burn-in effect in metalorganic chemical vapor deposition grown GaInP/GaAs heterojunction bipolar transistors is explained as due to the passivation of hydrogen-related recombination centers in the emitter. Results show that the diffusion base current contribution is dominated by the recombination in the emitter neutral region. The recombination centers are deactivated through the capture of electrons, available under forward bias, increasing the hole diffusion length and decreasing the diffusion contribution of the base current producing the observed current gain increase. These processes produce an independent behavior of the diffusion ideality factors for holes and electrons at each side of the emitter junction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
