Abstract
Nanocrystalline precipitates of the direct bandgap II–VI compound semiconductor ZnTe were synthesized by sequential high dose ion implantation of the elements. Thermal SiO 2 on (1 0 0)-silicon was chosen as target material in order to provide compatibility to silicon technology. The implantation dose was 2×10 16 and 4×10 16 cm −2 . Subsequent rapid thermal annealing of the as-implanted samples controls the formation of the nanocrystalline precipitates of ZnTe. The size distribution of the crystallites, their orientation and crystal structure were analyzed by thin film X-ray diffraction (XRD), secondary ion mass spectrometry depth profiling (SIMS) and Rutherford backscattering spectroscopy (RBS) as a function of implantation dose and annealing conditions. For selected samples transmission electron microscopy (TEM) cross-sections complete the structural investigations and provide direct information on the spatial size distribution of the nanocrystals.
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