Abstract
Most commercially available nitride devices are obtained along [0001] direction. That is why the internal polarization-induced electric fields in violet to green nitride light emitting diode (LED) and laser diode (LD) structures point in a direction opposite to what is desired for efficient flow of electrons and holes. This arrangement persist because of the need to have p-type layers on top of the structure to activate it and the lack of efficient structures grown along [0001] direction. To go around these problems one can use plasma-assisted molecular beam epitaxy (PAMBE) to grow buried tunnel junction (TJ) and invert current flow direction with respect to the built-in polarization [1], [2]. Recent progress in PAMBE resulted in obtaining LDs in wide spectral range (Fig 1) and enabled combining these structures with TJs [3] and even stacking two LDs together [4].
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