Abstract
Herein, the design, metal‐organic vapor‐phase epitaxial growth, fabrication, and characterization of buried‐tunnel junction (BTJ) current injection structures for InP/Si hybrid nanomembrane photonic crystal surface emitting lasers (PCSELs) are reported. Corresponding BTJ‐light‐emitting diodes on InP substrate show low series resistance and uniform carrier injection over square‐shaped device areas with side length ranging from 15 up to 250 μm, whereas BTJ‐PCSEL structures with similar current injection configuration fabricated on photonic‐crystal silicon‐on‐insulator substrate using transfer print technology show significant linewidth narrowing at low current density.
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