Abstract
The concentration profile of defect centres induced by proton irradiation, which had been proposed as a technique for production of recombination layers in silicon, is investigated using DLTS and spreading resistance. After irradiation and annealing additionally a buried shallow donor doped layer is observed. Comparison with α-irradiated samples suggests the interpretation as proton-containing centres. The buried n-layer may vary the breakdown voltage of power devices. It could be regarded as being favourable for GTO thyristors.
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