Abstract
A buried p+-AlGaAs gate AlGaAs/InGaAs/AlGaAs double heterostructure field effect transistor (FET) (p-gate HFET) operating in enhancement mode has been successfully fabricated using the Zn-diffusion technique. A low on-resistance of 1.6 Ωmm and a high gate built-in voltage of 1.5 V with a maximum transconductance of 420 mS/mm were obtained for a 0.8 µm gate device. The buried p-gate HFET is promising for power-FET applications which require low distortion, high efficiency and positive bias operation.
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