Abstract
AbstractA new method of producing a buried oxide is proposed. It involves implanting a silicon wafer with helium rather than oxygen ions and then subjecting it to high- temperature oxidation. The voids formed by helium ion implantation and subsequent annealing enhance the diffusion of oxygen atoms into the silicon. The oxygen atoms cause thermal oxide to grow at the void/silicon interface and transform the voids into buried oxide precipitates. Auger electron spectroscopy revealed that the total number of oxygen atoms in the precipitates was 9.3 × 1016 cm−2 and that the peak value of oxygen atom concentration in the wafer was approximately 25%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
