Buried-Interface Engineering of Conformal 2d/3d Perovskite Heterojunction for Efficient Perovskite/Silicon Tandem Solar Cells on Industrially Textured Silicon.

Abstract

Exploring strategies to control the crystallization and modulate interfacial properties for high-quality perovskite film on industry-relevant textured crystalline silicon solar cells is highly valued in the perovskite/silicon tandem photovoltaics community. The formation of a two-dimensional/three-dimensional (2D/3D) perovskite heterojunction has been widely employed to passivate defects and suppress ion migration in the film surface of perovskite solar cells. However, realizing solution-processed heterostructures at the buried interface face solvent incompatibilities with the challenge of underlying-layer disruption and texture incompatibilities with the challenge of uneven coverage. Here, we use a hybrid two-step deposition method to prepare robust 2D perovskites with cross-linkable ligands underneath the 3D perovskite. This structurally coherent interlayer benefits the preferred crystal growth of strain-free and uniform upper perovskite, inhibits interfacial defect-induced instability and recombination, and promotes charge-carrier extraction with ideal energy-level alignment. We demonstrate the broad applicability of the bottom-contact heterostructure for different textured substrates with conformal coverage and various precursor solutions with intact properties free of erosion. With this buried interface engineering strategy, the resulting perovskite/silicon tandem cells based on industrially textured Czochralski (CZ) silicon achieve a certified efficiency of 28.4% (1.0 cm2 ), while retaining 89% of the initial PCE after over 1,000-hour operation. This article is protected by copyright. All rights reserved.