Abstract
We report the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers formed by selective lateral regrowth of InP on the laser ridge by metal organic chemical vapor deposition (MOCVD). A fivefold improvement in maximum average power (up to 10 mW) and a twofold improvement in maximum operation duty cycle (up to 17%) are measured at 273 K and are attributed to lower lateral waveguide losses and a better heat dissipation.
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