Abstract
We report various aspects related to the selective area growth of thick InP:Fe layers by metal organic vapor deposition and their application to buried-heterostructures. In particular, we focus on the development of planar buried-heterostructure-quantum cascade lasers using selective wet chemical etching for ridge mesa preparation and versatile regrowth processes. After describing the optimization of the insulating properties of InP:Fe layers, we expose our approach to circumvent the difficulties inherent to the selective area growth on non-planar structures. By adding an InGaAs/InP layer stack (where, the InGaAs layer is used as a sacrificial layer) on the top of the active region, reproducible regrowths have been successfully carried out with good optical, electrical and crystalline quality. Using this method, buried-heterostructure quantum cascade lasers characterized in TM00 mode, exhibited output powers in the range of 2.5 W and wall plug efficiencies of about 13% at room temperature.
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