Abstract
An in situ process which includes electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth is applied to the fabrication of buried heterostructure vertical cavity surface-emitting laser (SEL) diodes and edge-emitting laser (EEL) diodes. The buried SEL with a 7.5 μm diameter has a pulsed laser threshold current of 1 mA, and a threshold voltage of 4 V with a peak power of 0.9 mW. The buried EEL with 2.5 μm stripe width and 800 μm cavity length has a threshold current density of 500 A/cm2.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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