Abstract
We succeeded in epitaxial growth of Sr film on Si(111) with an atomically abrupt hetero-interface in spite of the large lattice mismatch of 12%, by introducing a H monolayer on Si. In order to identify the buried H layer, we have carried out combination analysis by neutron reflectometry, multiple-internal-reflection fourier-transform infrared spectroscopy (MIR-FTIR), and transmission electron microscopy (TEM). We have found different neutron reflectivity profiles using the contrast variation between H and D atoms. Furthermore, IR peaks indicating the chemical state of the Si-H bond shift to the lower frequencies during Sr deposition, due to static interaction between the Sr and buried H atoms. These results suggest the existence of buried H layer at the hetero-interface acting as an effective buffer layer to manage the highly mismatched system.
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