Abstract
The investigation of low-temperature (1.6 K) photoluminescence from CdTe/GaAs epilayers with a thickness of 24–67 μm is reported. Beside a dominating bound exciton emission with narrow linewidth (0.16 meV) the spectra reveal pronounced emission due to radiative recombination of free excitons and two-electron transitions (TET) involving excitons bound to shallow donors. The well resolved free exciton emission at 776.4 nm ( n = 1) and 773.1 nm ( n = 2) indicates a low density of extended defects. A splitting of the free exciton line of about 2 meV is observed indicating unrelaxed misfit strain. The wavelength of the TET emission agrees well with that from Ga-related donors. From measurements of the TET intensity versus epilayer thickness we find an almost constant density of Ga-related donors in the epilayers.
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