Abstract

Rediscovered in the last decade, zinc oxide (ZnO) shows a great potential for many optoelectronics and to some extent microelectronics applications. However, a clear majority of effort expended in this fast developing field has been limited to heteroepitaxial structures grown on foreign substrates with lattice-parameter and thermal-expansion mismatch with ZnO which is detrimental. Recognizing the importance, the effort has shifted to include developing technologies capable of producing freestanding ZnO wafers in large-scale for ZnO based device applications, which is the subject matter of this manuscript. Three competing approaches - hydrothermal method, melt growth (modifications of the well known Bridgman technique), and seeded vapor transport growth - have now reached or are approaching commercial viability. In this article, we discuss the progress, outstanding problems, and prospects of these growth methods employed for commercial manufacturing of ZnO wafers.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call