Bulk ZnO as piezotronic pressure sensor

Abstract

The impact of uniaxial compressive mechanical stress on the electrical properties of a ZnO varistor ceramic was studied with respect to a potential use in pressure sensor applications. Current-voltage measurements as a function of temperature are strongly affected by the applied stress. The modulation of charge transport properties with uniaxial stress causes large changes in resistance. Hence, a gauge factor of ∼800 is attained, which significantly exceeds the value of conventional sensors. The effect is attributed to the piezotronic effect, i.e., the altering of the potential barrier at grain boundaries due to the piezoelectricity of ZnO. This change in grain boundary potential barriers via mechanical deformation represents a promising physical concept for the development of better materials for sensor applications.